RIBE Flux vs. Position Monitor

Recent work at SNL has demonstrated unique capabilities to experimentally measure a variety of ion and neutral particle parameters inside surface features being etched, including ion energy, angular distributions, ion and neutral species measurements. This report details the construction of one recent laboratory tool designed to measure ion beam uniformity over the wafer surface in a reactive ion beam etch system, (RIBE). This information is critical to the development of accurate plasma processing computer models and simulation methods, and is essential for reducing the cost of introducing new processing technologies.